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july 2016 docid026017 rev 3 1 / 15 this is information on a product in full production. www.st.com STL24N60DM2 n - channel 600 v, 0.195 typ., 15 a mdmesh? dm2 power mosfet in a powerflat? 8x8 hv package datasheet - production data figure 1 : internal schematic diagram features order code v ds @ t jmax r ds(on) max. i d STL24N60DM2 650 v 0.220 15 a ? fast - recovery body diode ? extremely low gate charge and input capacitance ? low on - resistance ? 100% avalanche tested ? extremely high dv/dt ruggedness ? zener - protected applications ? switching applications description this high voltage n - channel power mosfet is part of the mdmesh? dm2 fast recovery diode series. it offers very low recovery charge (q rr ) and time (t rr ) combined with low r ds(on) , rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and zvs phase - shift c onverters. table 1: device summary order code marking package packing STL24N60DM2 24n60dm2 powerflat? 8x8 hv tape and reel 5 1 2 3 4 powerfl a t? 8x8 hv
contents STL24N60DM2 2 / 15 docid026017 rev 3 contents 1 electrical ratings ................................ ................................ ............. 3 2 electrical characteristics ................................ ................................ 4 2.1 electrical characteri stics (curves) ................................ ...................... 6 3 test circuits ................................ ................................ ..................... 8 4 package information ................................ ................................ ....... 9 4.1 powerflat8x8 hv package information ................................ ........ 10 4.2 powerflat 8x8 hv packaging information ................................ ..... 12 5 revision history ................................ ................................ ............ 14
STL24N60DM2 electrical ratings docid026017 rev 3 3 / 15 1 electrical ratings table 2: absolute maximum ratings symbol parameter value unit v gs gate - source voltage 25 v i d (1) drain current (continuous) at t case = 25 c 15 a drain current (continuous) at t case = 100 c 9.5 i dm (1) (2) drain current (pulsed) 60 a p tot (1) total dissipation at t case = 25 c 125 w dv/dt (3) peak diode recovery voltage slope 40 v/ns dv/dt (4) mosfet dv/dt ruggedness 50 t stg storage temperature range - 55 to 150 c t j operating junction temperature range notes: (1) the value is limited by package (2) pulse width limited by safe operating area. (3) i sd 15 a, di/dt 400 a/s, v ds(peak) < v (br)dss , v dd =400 v (4) v ds 480 v. table 3: thermal data symbol parameter value unit r thj - case thermal resistance junction - case 1 c/w r thj - pcb (1) thermal resistance junction - pcb 45 notes: (1) when mounted on fr - 4 board of inch2, 2oz cu. table 4: avalanche characteristics symbol parameter value unit i ar avalanche current, repetitive or not repetitive (pulse width limited by t jmax ) 3 a e as single pulse avalanche energy (starting t j = 25 c, i d = i ar , v dd = 50 v) 160 mj
electrical characteristics STL24N60DM2 4 / 1 5 docid026017 rev 3 2 electrical characteristics (t case = 25 c unless otherwise specified) table 5: on/off - state symbol parameter test conditions min. typ. max. unit v (br)dss drain - source breakdown voltage v gs = 0 v, i d = 1 ma 600 v i dss zero gate voltage drain current v gs = 0 v, v ds = 600 v 1.5 a v gs = 0 v, v ds = 600 v, t case = 125 c 100 i gss gate - body leakage current v ds = 0 v, v gs = 25 v 10 a v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 3 4 5 v r ds(on) static drain - source on - resistance v gs = 10 v, i d = 9 a 0.195 0.220 table 6: dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds = 100 v, f = 1 mhz, v gs = 0 v - 1055 - pf c oss output capacitance - 56 - c rss reverse transfer capacitance - 2.4 - c oss eq. (1) equivalent output capacitance v ds = 0 to 480 v, v gs = 0 v - 259 - pf r g intrinsic gate resistance f = 1 mhz, i d = 0 a - 7 - q g total gate charge v dd = 480 v, i d = 18 a, v gs = 10 v (see figure 15: "gate charge test circuit" ) - 29 - nc q gs gate - source charge - 6 - q gd gate - drain charge - 12 - notes: (1) c oss eq. is defined as a constant equivalent capacitance giving the same charging time as c oss when v ds increases from 0 to 80% v dss . table 7: switching times symbol parameter test conditions min. typ. max. unit t d(on) turn - on delay time v dd = 300 v, i d = 9 a, r g = 4.7 , v gs = 10 v (see figure 14: "switching times test circuit for resistive load" and figure 19: "switching time waveform" ) - 15 - ns t r rise time - 8.7 - t d(off) turn - off delay time - 60 - t f fall time - 15 -
STL24N60DM2 electrical characteristics docid026017 rev 3 5 / 15 table 8: source - drain diode symbol parameter test conditions min. typ. max. unit i sd (1) source - drain current - 15 a i sdm (2) source - drain current (pulsed) - 60 a v sd (3) forward on voltage v gs = 0 v, i sd = 18 a - 1.6 v t rr reverse recovery time i sd = 18 a, di/dt = 100 a/s, v dd = 60 v (see figure 16: " test circuit for inductive load switching and diode recovery times" ) - 155 ns q rr reverse recovery charge - 956 nc i rrm reverse recovery current - 12.5 a t rr reverse recovery time i sd = 18 a, di/dt = 100 a/s, v dd = 60 v, t j = 150 c (see figure 16: " test circuit for inductive load switching and diode recovery times" ) - 200 ns q rr reverse recovery charge - 1450 nc i rrm reverse recovery current - 13 a notes: (1) the value is limited by package. (2) pulse width limited by safe operating area (3) pulsed: pulse duration = 300 s, duty cycle 1.5%
electrical characteristics STL24N60DM2 6 / 15 docid026017 rev 3 2.1 electrical characteristics (curves) figure 2 : safe operating area figure 3 : thermal impedance figure 4 : output characteristics figure 5 : transfer characteristics figure 6 : gate charge vs gate - source voltage figure 7 : static drain - source on - resistance r 0 2 id(a) 4 6 8 v gs =10 v 0.184 0.188 0.192 0.196 0.200 0.204 10 12 14 10 -5 10 -4 10 -3 10 -2 t p (s) 10 -2 10 -1 k 0.2 0.05 0.02 0.01 0.1 single pulse =0.5 z th = k*r thj-c = t p / ? t p ?
STL24N60DM2 electrical characteristics docid026017 rev 3 7 / 15 figure 8 : capacitance variations figure 9 : normalized gate threshold voltage vs temperature figure 10 : normalize d on - resistance vs temperature figure 11 : normalized v(br)dss vs temperature figure 12 : output capacitance stored energy figure 13 : source - drain diode forward characteristics eoss 0 v ds (v) (j) 200 100 300 0 1 2 3 4 5 6 7 8 400 500 600 am15669v1 r ds(on) tj(c) (norm) i d =9 a - 5 0 - 2 5 0 2 5 5 0 7 5 1 0 0 1 2 5 0 . 5 0 . 7 0 . 9 1 . 1 1 . 3 1 . 5 1 . 7 1 . 9 2 . 1 2 . 3 2 . 5 v gs =10 v
test circuits STL24N60DM2 8 / 15 docid026017 rev 3 3 test circuits figure 14 : switching times test circuit for resistive load figure 15 : gate charge test circuit figure 16 : test circuit for inductive load switching and diode recovery times figure 17 : unclamped inductive load test circuit figure 18 : unclamped inductive waveform figure 19 : switching time waveform am15858v1 v i p w v d i d d.u. t . l 2200 f 3.3 f v dd gnd1 gnd2 + a d d.u. t . s b g 25 a a b b r g g f as t diode d s l=100h f 3.3 1000 f v dd gnd1 gnd2 d.u. t . + v gs p w v d r g r l d.u. t . 2200 f 3.3 f v dd gnd2 (power) gnd1 (driver signal) +
STL24N60DM2 package information docid026017 rev 3 9 / 15 4 package information in order to meet environmental requirements, st offers these devices in different grades of eco pack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
package information STL24N60DM2 10 / 15 docid026017 rev 3 4.1 powerflat8x8 hv package information figure 20 : powerflat? 8x8 hv package outline 8222871_rev_3_ a
STL24N60DM2 package information docid026017 rev 3 11 / 15 table 9: powerflat? 8x8 hv mechanical data dim. mm min. typ. max. a 0.75 0.85 0.95 a1 0.00 0.05 a3 0.10 0.20 0.30 b 0.90 1.00 1.10 d 7.90 8.00 8.10 e 7.90 8.00 8.10 d2 7.10 7.20 7.30 e1 2.65 2.75 2.85 e2 4.25 4.35 4.45 e 2.00 l 0.40 0.50 0.60 figure 21 : powerflat? 8x8 hv footprint all dimensions are in millimeters.
package information STL24N60DM2 12 / 15 docid026017 rev 3 4.2 powerflat8x8 hv packaging information figure 22 : powerflat? 8x8 hv tape all dimensions are in millimeters. figure 23 : powerflat? 8x8 hv package orientation in carrier tape
STL24N60DM2 package information docid026017 rev 3 13 / 15 figure 24 : powerflat? 8x8 hv reel all dimensions are in millimeters.
revision history STL24N60DM2 14 / 15 docid026017 rev 3 5 revision history table 10: document revision history date revision changes 03 - mar - 2014 1 first release. 21 - jan - 2016 2 modified: title, features, description and internal schematic in cover page modified: section 3: "test circuits" updated: section 4: "package information" minor text changes 25 - jul - 2016 3 document status promoted from preliminary to production data.
STL24N60DM2 docid026017 rev 3 15 / 15 important notice C please read carefully stmicroelectronics nv and its subsidiaries (st) reserve the right to make changes, corrections, enhancements, modifications , and improvements to st products and/or to this document at any time without notice. purchasers should obtain the latest relevant information on st products before placing orders. st products are sold pursuant to sts terms and conditions of sale in place at the time of or der acknowledgement. purchasers are solely responsible for the choice, selection, and use of st products and s t assumes no liability for application assistance or the design of purchasers products. no license, express or implied, to any intellectual property right is granted by st herein. resale of st products with provisions different from the information set forth herein shall void any warranty granted by st for such product. st and the st logo are trademarks of st. all other product or service names are the property of their respective owners. information in this document supersedes and replaces information previously supplied in any prior versions of this document. ? 2016 stmicroelectronics C all rights reserved

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